Test fixture characterization for high-frequency silicon substrate parasitic extraction Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/3t945t843

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  • At frequencies exceeding 1-2 GHz, the reactive nature of a silicon substrate must be accounted in the substrate network models used in substrate coupling simulation. High-frequency substrate models, containing reactive components, must be validated through high-frequency network analyzer measurements. Prior fabricated test fixtures have been modified to enable high-frequency (up to 20 GHz) network parameter measurements of a 0.35 um CMOS heavily-doped silicon substrate through an on-chip probing scheme. The performance of the test fixture and the measurement deembedding procedure has been evaluated, and suggestions for future improvements are presented. A new probing scheme is proposed to enable high-frequency network parameter measurements of a silicon substrate. The design of the test structures and the deembedding procedure has been validated through extensive simulations in HFSS.
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