Layout dependent and bias independent scalable substrate model for RF MOSFETs Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/3t945v008

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  • The dependence of the substrate resistance, R[subscript sub], for MOS transistor RF modeling on transistor biasing and layout is studied from device simulations and measurements. Though R[subscript sub] is found to be bias dependent, the error incurred by assuming a constant value equal to the DC resistance is not significant. A scalable model for R[subscript sub] of multiple gate fingers is developed. This model is simple to extract and gives good agreement for the output admittance of a MOSFET. The model is validated by measurements on DC test structures fabricated in a TSMC 0.35 μm CMOS process. The dependence of Rb on transistor dimensions and the location of substrate contacts with respect to device active area is also presented. A low noise amplifier (LNA) is designed and fabricated in the 0.35 μm TSMC process to show the effect of R[subscript sub] on the performance of a LNA.
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  • File scanned at 300 ppi (Monochrome, 24-bit Color) using Capture Perfect 3.0.82 on a Canon DR-9080C in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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  • description.provenance : Made available in DSpace on 2012-07-26T17:56:45Z (GMT). No. of bitstreams: 1 SuravarapuRavikanth2003.pdf: 1030591 bytes, checksum: d5d5c16804665089d2424ededb396896 (MD5) Previous issue date: 2003-01-07
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2012-07-26T17:56:45Z (GMT) No. of bitstreams: 1 SuravarapuRavikanth2003.pdf: 1030591 bytes, checksum: d5d5c16804665089d2424ededb396896 (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2012-07-26T17:53:52Z (GMT) No. of bitstreams: 1 SuravarapuRavikanth2003.pdf: 1030591 bytes, checksum: d5d5c16804665089d2424ededb396896 (MD5)

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