Graduate Thesis Or Dissertation
 

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/3t945w53h

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  • As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom electrodes with insulators deposited via atomic layer deposition (ALD) enables reproducible fabrication of MIM diodes with stable I-V behavior. Key performance parameters of MIM diodes include high I-V asymmetry and low turn-on voltage. The standard way to achieve asymmetry relies on the use of non-equivalent work function metal electrodes to induce a built-in field that creates polarity dependent electron tunneling barrier. Thus the electrical performance of MIM diodes are directly impacted by the nature of the energy barriers at the interfaces. In this work, we report the first use of internal photoemission spectroscopy (IPE) to measure barrier heights between an amorphous zirconium copper aluminum nickel (ZCAN) metal alloy bottom electrode and several high-k dielectrics deposited via ALD. In IPE, the conduction band offset between two materials is characterized by measuring the additional current created by photo-excitation of carriers under an applied bias (V[subscript app]). Devices were tested in a custom built IPE system.
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  • 2017-11-06 to 2018-02-13

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