Graduate Thesis Or Dissertation
 

Ultra low voltage DRAM current sense amplifier with body bias techniques

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/4m90dz72d

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  • The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector current is much larger than the MOSFET drain current under similar conditions. The requirements for low power and low power densities results in lower power supply voltages which are also inconsistent with the threshold voltage variations in CMOS technology, as a consequence at least pulsed body bias or synchronous body bias will probably be utilized. Given that of the CMOS body will be driven or the CMOS gate and body connected a BJT technique is proposed for ultra low voltages like Vdd=0.5. Utilizing present CMOS process technology good results can be achieved with ultra low power using gate-body connected transistors and a current sense amplifier.
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file details GangYung-jin1999.pdf 2017-08-15 Público Descargar