Development, fabrication, and characterization of transparent electronic devices Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/5425kf220

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  • The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and prototypical n-channel, enhancement mode TFT characteristics. Electrical characterization studies of these ZnO-based transparent TFTs and of CuYO₂ / ZnO / ITO p-i-n heterojunction diodes serve to elucidate the mechanisms responsible for the behavior of these devices in particular, and of transparent electronic devices in general. Energy band analysis of the degenerate semiconductor / insulator heterojunction yields insight into the phenomenon of charge injection into an insulator, with important implications for the analysis of devices containing heterojunctions of this nature. Finally, a novel technique for simultaneously characterizing carrier injection into an insulator and interface channel formation, the capacitance-(voltage, frequency) [C-(V,f)] technique, is proposed and employed in the characterization of ZnO-based TFT structures.
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