Electrical and optical properties of semi-insulating and ion-implanted GaAs and InP Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/5h73q0726

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  • The electrical and optical properties of semi-insulating, epitaxial and ion-implanted GaAs and InP have been characterized and analyzed. Electron and hole traps in semi-insulating GaAs and InP, with activation energies ΔE[subscript T] ranging from 0.16 ± 0.01 to 0.98 ± 0.01 eV, have been detected and characterized by Photo-Induced Current Transient measurements. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, Fe and "0" levels in semi-insulating GaAs and InP were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures. Semi-insulating GaAs and InP, vapor phase epitaxial GaAs, and liquid phase epitaxial InP were implanted with ²⁸Si⁺ to evaluate the changes in transport properties and deep-level spectra. The dominant 0.83 eV electron trap in VPE GaAs and 0.38 eV electron trap and 0.22 eV hole trap in LPE InP were removed and new traps were created. Electron traps with ΔE[subscript T] = 0.52 ± 0.01 eV and hole traps with ΔE[subscript T] = 0.15 ± 0.01 eV were consistently detected in implanted and annealed GaAs, irrespective of the type of starting material. These centers are characteristic of the implant and anneal processing in GaAs. Similarly, an electron trap with ΔE[subscript T] = 0.17 ± 0.01 eV was consistently detected in implanted LPE InP. A significant reduction in electron mobility for T < 300K was observed in epitaxial GaAs and InP after implant and anneal. The mobility data were analyzed in detail and it is apparent that the reduction in mobility is due to increased impurity scattering and not due to implant damage.
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