Graduate Thesis Or Dissertation
 

Silicon Microring Resonator Driven by High-Mobility Conductive Oxide Capacitor

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  • Silicon photonics has rapidly become one of the most promising photonic integration platforms. Especially, microring resonator (MRR) plays a pivotal role in silicon photonics and has been widely used for electro-optic (E-O) modulators and wavelength filters due to its small footprint, low energy consumption, and high quality factor (Q-factor). Recently, indium-tin-oxide (ITO) has emerged as a new material that can be integrated with silicon MRRs using a metal-oxide-semiconductor (MOS) structure, which can offer significantly enhanced E-O effect and better energy efficiency. However, the performance is limited by the relatively low electron mobility, which induces relatively high optical loss and degrades Q-factor. This thesis focuses on the demonstration of high Q-factor MRR driven by high mobility transparent conductive oxide (TCO) material. In the first part, a passive MRR is optimized by fabrication and theoretical design, which achieves a high Q-factor of 20,000. Next, a MRR with a titanium-doped indium oxide gate has been demonstrated to obtain a tunability of 42 pm/V with a high Q-factor above 3,600. Besides, a new method has been developed to characterize the optical frequency free carrier mobility in the accumulation layer of the MOS structure. At the end of the thesis, different MRRs driven by high mobility TCO materials are compared. The simulation results indicate that an ultra-high tunability of 906 pm/V and a high Q-factor above 6,700 can be potentially achieved with slotted waveguide MRR.
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  • Ongoing Research
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  • 2020-06-11 to 2021-07-11

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