Microstrips on gold-doped silicon substrates Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/6969z315r

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  • The power dissipation of microstrip transmission-line on gold-doped silicon substrates was investigated. The gold-doping was applied to a regular n-type silicon substrate with resistivity of 5 to 10 ohm-cm. Insertion-loss tests were employed to measure the power dissipation of the microstrips. Power dissipation somewhat less than that for intrinsic silicon with resistivities in the order of 1000 ohm-cm were obtained. For application, band-pass filters, of the parallel-coupled microstrip-line type were also built on silicon substrates and tested. The performance of the filters showed that a great deal of care should be taken in the design and fabricating process if a good result is to be obtained.
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  • File scanned at 300 ppi (Monochrome, 8-bit Grayscale) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-02-03T21:26:12Z (GMT) No. of bitstreams: 1 LaiChengW1972.pdf: 2571958 bytes, checksum: 124a8404131862f55d6ee88060c7ffb6 (MD5)
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  • description.provenance : Made available in DSpace on 2014-02-10T18:09:17Z (GMT). No. of bitstreams: 1 LaiChengW1972.pdf: 2571958 bytes, checksum: 124a8404131862f55d6ee88060c7ffb6 (MD5) Previous issue date: 1972-05-04
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