Graduate Thesis Or Dissertation

 

Influence of surface fields on shallow planar-junction breakdown voltages Public Deposited

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/6969z4302

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  • The influence of surface fields on the breakdown voltage is studied experimentally for p⁺-n silicon diodes with a junction depth of 0.5μ in order to improve the curvature- limited breakdown of the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate metal electrode are also studied to determine the feasibility of a simple fabrication process for a microwave transistor. It is found that the breakdown voltage (BV) can be modulated by the voltage (V[subscript G]) of the metal electrode if the junction periphery is completely covered by the gate but not if there is a gap in the gate electrode. Measurements are given which show that, in the region where the surface is depleted, the breakdown voltage is given by BV = m V[subscript G] + constant. The slope m approaches unity for low substrate impurity concentrations and for small oxide thicknesses. Furthermore, the slope m is steeper for a circular diode than that of a rectangular diode; also, breakdown voltage is higher for a circular diode by 3% for 1 ohm-cm and 6% for 5 ohm-cm substrates. For a high-voltage microwave transistor, the most desirable model is proposed in this project by the physical configuration in which the gate metal is connected to the diffused emitter or base region, and the disadvantages due to the parasitic capacitances are also discussed.
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