Graduate Thesis Or Dissertation

 

Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications Public Deposited

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/6t053j36r

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  • The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply, an electron cyclotron resonance plasma (ECR) source, a substrate heater/controller, a film thickness monitor, and a leak valve for gas flow control. Ga₂0₃:Eu ACTFEL devices are fabricated using the ARE system. The maximum Ga₂O: deposition rate is approximately 2 nm/s. As-deposited films are transparent, insulating, and amorphous with an index of refraction of 1.68 and an optical bandgap of 4.25-4.9 eV. Ga₂O₃ films are typically amorphous until annealed above 1000°C in a furnace or by rapid thermal annealing. However, when hydrothermal annealing is employed, Ga₂O₃ films crystalize at temperatures as low as 450°C. Electrical and optical characterization indicates that the Ga₂O₃:Eu ACTFEL devices have very little charge transfer and emit very dim, orange-red electroluminescence with an emission peak of about 615 nm.
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