Exchange interaction studies in magnetic semiconductors by neutron scattering Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/79408079t

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  • Theories predict that making a dilute magnetic semiconductor strongly p -type would allow it to remain ferromagnetic at room temperature. This is of intrest as a ferromagnetic semiconductor would allow for a great many applications in the field of spintronics. Neutron scattering experiments were undertaken to better understand the antiferromagnetic interactions in type AII1 −x Mnx B VI semiconductors. These antiferromagnetic interactions, which compete with the ferromagnetic interactions, result in materials which are ferromagnetic, but only at very low temperatures. Inelastic neutron scattering was undertaken to determine the exchange constant in various materials while neutron diffraction was used to determine the distances involved in the exchange interaction. There appears to be an overall distance dependence in the materials, but high pressure studies undertaken show the functionality differers between the overall trend and the individual materials. The data taken is also analyzed to determine more distant interactions and secondary exchange interactions. Results indicate that the exchange interaction strength differs for that of the overall trend and the individual materials. Farther analysis of the data obtained yielded useful information for farther analysis; however, the results were limited by the experimental constraints of the primary investigation.
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