The drain current of InP MISPETs is often observed
to decrease as a function of time after the application of
a positive gate bias which involves an accumulation of
electrons in the channel. Various models have been
proposed for this drain current drift (DCD) phenomenon.
In this thesis, variable-temperature bias-stress
measurements of InP MIS capacitors were employed in order
to determine the dominant DCD mechanism from a analysis of
the activation energy of the flat band voltage shift.
Two distinct activation energies at 40-50meV and 1.1-
1.2eV were obtained from variable-temperature bias-stress
measurements over a temperature range of 100-350K. The 40-
50meV activation energy dominants the flat band shift at
low temperatures and is consistant with thermally
activated tunneling of electrons from the InP conduction
band into a discrete trap in the native oxide. The 1.1-1.2
eV activation energy is that predicted for phosphorous
vacancy nearest-neighbour hopping (PVNNH) in which the
channel electrons are captured by shallow acceptors which
are created by the hopping of an In atom into a
phosphorous vacancy. The estimated fraction of the flat
band shift in these particular samples at room temperature
due to PVNNH is approximately 20%.
The mechanism of PVNNH has also been investigated
through a computer simulation of the flat band shift
versus time. The simulation is based on an analysis of the
kinetics of the PVNNH defect reaction sequence in which
the electron concentration in the channel is related to
the applied bais by a solution of the Poisson equation.
The simulation demonstrates quantitatively that the
temperature dependence of the flat band shift is
associated with PVNNH for temperatures above room
temperature. A slight deviation from the experimental data
at high temperature is apparent in the simulation and
several reasons for this small deviation are provided.
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