Zinc tin oxide thin-film transistor current mirror circuits Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/8049g8239

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  • The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this material system. Accurate current mirror behavior is demonstrated for current mirrors with small mirroring ratios. Deviations from the ideal mirroring ratio are attributed to three primary sources: TFT geometric mismatch, threshold voltage mismatch, and finite output resistance. The most significant source of mirroring error for the current mirrors fabricated is geometric mismatch associated with processing. Variations in TFT size leading to mirroring error arise from the use of mylar masks, inconsistent channel etching, and lift-off patterning of source-drain contacts. Geometric mismatch must be reduced before the effects of threshold voltage mismatch and finite output resistance on mirroring error can be unambiguously assessed. TFT size variation, and thus mirroring error, can be reduced by using chrome masks, developing an improved channel etch, avoiding lift-off processing and utilizing more sophisticated circuit layout. The work of this thesis continues to support the use of AOS for a variety of applications. Current mirrors are a vital analog circuit building block, used in a multitude of circuits, without which the scope of AOS-based electronics will be limited. The successful realization of such a circuit in ZTO, despite the processing challenges, bolsters the case that AOS can be used in the next stage of large-area electronics.
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