Improved stability in ACTFEL devices Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/8p58ph93t

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  • The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer. The second method for improving the stability involves a vacuum anneal followed by an oxygen exposure. The oxygen exposure is accomplished by heat treatment of the ZnS surface in air or an oxygen plasma prior to the deposition of the second insulator. A model for the observed instability is proposed in which accumulation of positive charge near the ZnS insulator interfaces gives rise to the observed increase in the BV threshold voltage with aging for the control sample. The positive interface charge is attributed to sulfur vacancies which are positively ionized donors. The improved device stability is attributed to a reduction in the sulfur vacancy concentration in the ZnS concomitant with the addition of a CaS buffer layer or oxygen exposure of the ZnS surface.
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