Diffusion of boron and phosphorus in silicon Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/9019s625q

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  • This thesis presents some experimental results for producing controlled PN and NPN diffused structures in silicon by varying the strength of the diffusion sources. Boron diffusions were carried out in a N₂ atmosphere at 1200°C with 10%, 20%, 30% and 40% B₂0₃ in silicic acid as sources. Phosphorus diffusions were carried out at 1150°C with a P₂0₅, source at temperatures of 220°C, 300°C, 400°C and 500°C and 0₂ as a carrier gas. For boron diffusions, the surface concentration of the boron impurity atoms diffused into an N-type silicon wafer varied from 2.18 x 10¹⁷ to 1.45 x 10²⁰ atoms/cm³ as the composition of the source was changed. Similarly, for phosphorus diffusions, the surface concentration of phosphorus impurity atoms diffused into a P-type silicon wafer varied from 1.8 x 10¹⁸ to 9.5 x 10²¹ atoms/cm³ as the temperature of the source was changed. Post-diffusion, which consists of heating a silicon wafer previously diffused with impurity atoms, was investigated to impurity atoms. structures were determine the Using these fabricated by redistribution of the results, NPN and FNP double diffusions.
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