Percussive-welded p-n junctions in silicon Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/9g54xn19n

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  • This thesis investigates a way to fabricate P-N junctions by percussive welding. The theoretical basis of percussive welding, design considerations of the apparatus used, and the electrical characteristics of the junctions were the main objectives of this investigation. P-type silicon wafers and gold wire doped with arsenic as a N-type impurity source were the materials studied. It was found that percussive welding alone gave ohmic contacts. An alloying treatment changed the junctions to rectifying type. The junction capacitance versus reverse bias voltage relations were studied. From these relations, impurity profiles of a simple alloyed junction and an alloyed percussive-welded junction were obtained. A comparison between the two impurity profiles was given.
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  • File scanned at 300 ppi using Capture Perfect 3.0 on a Canon DR-9050C in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
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  • description.provenance : Submitted by Kevin Martin (martikev@onid.orst.edu) on 2014-03-27T18:14:31Z No. of bitstreams: 1 TaoDavidMS1968_Redacted.pdf: 1234390 bytes, checksum: 70b095426e3c462d6fade534c0c0247d (MD5)
  • description.provenance : Approved for entry into archive by Katy Davis(kdscannerosu@gmail.com) on 2014-04-07T17:29:14Z (GMT) No. of bitstreams: 1 TaoDavidMS1968_Redacted.pdf: 1234390 bytes, checksum: 70b095426e3c462d6fade534c0c0247d (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-04-01T13:38:53Z (GMT) No. of bitstreams: 1 TaoDavidMS1968_Redacted.pdf: 1234390 bytes, checksum: 70b095426e3c462d6fade534c0c0247d (MD5)
  • description.provenance : Made available in DSpace on 2014-04-07T17:29:14Z (GMT). No. of bitstreams: 1 TaoDavidMS1968_Redacted.pdf: 1234390 bytes, checksum: 70b095426e3c462d6fade534c0c0247d (MD5) Previous issue date: 1968-05-06

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