Temperature dependence of internal friction in silicon at low frequency Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/9s161847j

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  • This investigation represents a previously unreported method of measurement of internal friction in single crystals of silicon. The method consists of exciting a rectangular reed of silicon of uniform cross section into forced vibration at its resonant frequency. The end of the reed is silver plated and eddy currents induced in the silver plate by an oscillating magnetic field interact with an inhomogenous permanent magnetic field to provide the periodic driving force. Values of the internal friction Q⁻¹, and the strain amplitude ε, are then determined from optical measurements. The entire device is maintained in a vacuum chamber at pressures less than 60 microns of Hg. The results indicate that the values of Q⁻¹ in silicon are below the lower limit of resolution of the apparatus used. However, an upper limit of Q⁻¹ < 3 x 10⁻⁴ at a frequency of 81 cps and at temperatures from 20°C to 130°C can be placed. These results are cornpared with projected data of Southgate and Attard.
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  • File scanned at 300 ppi using Capture Perfect 3.0 on a Canon DR-9050C in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
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