Analysis of the processing and characterization of p-type CuScO₂ thin films Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/9w032733v

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  • Two different doping techniques, oxygen intercalation and Mg cation substitution, were investigated in thin film p-type CuScO₂, a wide band gap semiconductor with the delafossite structure. Films rf-sputtered onto amorphous SiO₂ substrates were polycrystalline after post-deposition annealing. X-ray diffraction was used to determine that the films are predominantly polycrystalline 3R CuScO₂ with 2H stacking faults, and that the formation of Cu₂Sc₂O₅ occurs at an intermediate processing stage. Oxygen intercalation increases the a-axis lattice parameter with a much smaller effect on the c-axis parameter. Mixed phases of oxidized and unoxidized CuScO₂ were observed in intercalated films. Substitution of up to 5% Mg for Sc increases conductivity to a maximum of 0.02 S/cm with no increase in optical absorption. Oxygen intercalation increases conductivity to a maximum of 26 S/cm with a significant increase in optical absorption. Grain growth and surface morphology changes after annealing were observed using atomic force microscopy. CuScO₂ deposited onto single crystal Al₂O₃ substrates at high temperatures using pulsed laser deposition were strongly c-axis oriented, and required no post deposition annealing. The conductivity was lower for the same oxygen intercalation treatment, indicating that grain boundary effects are important for diffusion of oxygen. Optical absorption of such films indicated a direct band gap of 3.6 eV.
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