Material development for thin-film transistors Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/b5644v117

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  • The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole carrier concentration of 10¹⁷ cm⁻³. Simulations employing the comprehensive depletion-mode model (CDMM) are used to extract TFT channel interface and bulk mobility, along with carrier concentration. The extracted values from CDMM simulations are in close agreement with Hall-effect measurements of carrier concentration and TFT incremental mobility. TFTs are fabricated employing solution-processed thin films spin-coated with electrochemically prepared solutions. Dual active-layer TFTs utilizing solution-processed IZTO-IGZO active layers demonstrated the highest average mobility, exceeding that of control sputtered IGZO TFTs. Sputtered IGZO TFTs are studied using solution-processed Al₂O₃ and LaAlO₃ gate insulator layers. The solution-processed Al₂O₃ gate exhibits high subthreshold swing compared to employing a thermally grown SiO₂ gate insulator layer.
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