Electrical and optical measurements on a.c. thin-film electro-luminescent devices Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/br86b6773

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  • Development of a suitable thin-film technology has stimulated research in, and production of, a.c. thin film electroluminescent (ACTFEL) devices. The aim of this thesis is to provide a better understanding of the physical processes associated with the device characteristics of such ACTFEL devices. The unique phenomena exhibited by these devices leads to a variety of possible novel display applications Since the device is still in the experimental stage of development few studies have been made of the physical processes leading to the observed phenomena. This is in marked contrast to other areas of semiconductor device research in which the physical processes responsible for device behavior are well understood. The results of detailed device characterization, along with an interpretation of the physical processes responsible, are discussed in this thesis. Included here are the basic electrical, optical and thermal properties of the device as well as its hysteresis behavior which enables inherent memory devices to be fabricated. The hystefesis characteristic allows the sample to be set in either an emissive or non-emissive mode when subjected to the same excitation voltage. A model for the interpretation of the hysteresis behavior is presented which describes the physical processes leading to a negative resistance effect within the thin film, in this case Mn doped ZnS. The negative resistance instability in turn is used to explain the hysteresis in the brightness/voltage characteristic. Computer simulations of the model provide information on how to improve these memory characteristic and certain improvements in device behavior have been verified experimentally.
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