The concentration profile of diffused radio-active antimony in a silicon-dioxide layer Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/cc08hh86h

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  • The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity concentration in semi-conductor device technology. It is also recognized that the passivation of the silicon surface by the vitreous silicon dioxide envelope protects the underlying surface from damage during the diffusion process. Thus indirectly it helps in improving the device parameters, like current amplification factor, the reverse current and the breakdown voltage. In spite of its very wide application in device design the physics of the effect is hardly understood. Very little work has been done in this field. The mechanism of the chemical reduction of the impurity oxide in the silicon dioxide layer and its distribution therein should have a strong influence on the concentration of the impurity in silicon. The present endeavor was concerned with finding the distribution of antimony, one of the donor elements, in the oxide layer. The experimental evidence indicates that the migration of antimony through silicon dioxide is a diffusion controlled reaction and that its concentration profile can be broken up into two regions. The diffusion follows an approximate erfc distribution in the first region with diffusion constant = 7.40 x 10⁻¹⁵ cm²/sec. The second region, however, shows a saturation behavior.
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