A P-well GaAs MESFET technology Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/cc08hj293

Descriptions

Attribute NameValues
Creator
Abstract or Summary
  • The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions of similar circuits in silicon based technology. However, full exploitation of these advantages has not been realized. This study examines the limitations imposed on conventional GaAs metal-semiconductor field effect transistor (MESFET) technology by deviations of the semi-insulating substrate material from ideal behavior. The interaction of the active device with defects in the semi-insulating GaAs substrate is examined and the resulting deviations in MESFET performance from ideal behavior are analyzed. A p-well MESFET technology is successfully implemented which acts to shield the active device from defects in the substrate. Improvements in the operating characteristics include elimination of drain current transients with long time constants, elimination of the frequency dependence of g[subscript ds] at low frequencies, and the elimination of sidegating. These results demonstrate that control of the channel to substrate junction results in a dramatic improvement in the functionality of the GaAs MESFET. The p-well MESFET RF characteristics are examined for different p-well doping levels. Performance comparable with the conventional GaAs MESFET technology is demonstrated. Results indicate that optimization of the p-well MESFET doping levels will result in devices with uniform characteristics from DC to the highest operating frequency.
Resource Type
Date Available
Date Copyright
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Committee Member
Academic Affiliation
Non-Academic Affiliation
Subject
Rights Statement
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi (Monochrome, 8-bit Grayscale) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
Replaces
Additional Information
  • description.provenance : Made available in DSpace on 2013-02-19T17:35:26Z (GMT). No. of bitstreams: 1 CanfieldPhilipC1991.pdf: 5840195 bytes, checksum: 9ea57f7220b859a7da8ab4ea02ad31fd (MD5) Previous issue date: 1990-08-02
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-02-19T17:31:25Z (GMT) No. of bitstreams: 1 CanfieldPhilipC1991.pdf: 5840195 bytes, checksum: 9ea57f7220b859a7da8ab4ea02ad31fd (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-02-19T17:35:26Z (GMT) No. of bitstreams: 1 CanfieldPhilipC1991.pdf: 5840195 bytes, checksum: 9ea57f7220b859a7da8ab4ea02ad31fd (MD5)
  • description.provenance : Submitted by Kaylee Patterson (kdpscanner@gmail.com) on 2013-02-18T23:31:50Z No. of bitstreams: 1 CanfieldPhilipC1991.pdf: 5840195 bytes, checksum: 9ea57f7220b859a7da8ab4ea02ad31fd (MD5)

Relationships

Parents:

This work has no parents.

Last modified

Downloadable Content

Download PDF

Items