Development of perovskite thin films for use in piezoelectric based microelectromechanical systems Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/db78th27k

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  • The lead-zirconate-titanate (PZT) solid solution system is currently the workhorse of piezoelectric-based microelectromechanical systems (MEMS) research. Among bulk materials it is known to be one of the strongest piezoelectrics, with extremely high piezoelectric coefficients and electro-mechanical coupling factors. Reproducing these exceptional qualities in thin film form, however, requires precise tuning of composition and texture. In this thesis, methods to grow textured or epitaxial PZT thin films are investigated. Solution based methods were chosen to develop conductive LaNiO3 films on biaxially textured substrates for lattice matched bottom electrodes. The goal was to maximize crystallinity and minimize resistivity through precursor modification and thermal treatments. By depositing LaNiO3 on flexible nickel alloy tapes with biaxially textured ion-beam-assisted-deposition (IBAD) MgO buffer layers, highly oriented thin films were produced with conductivity around 600 μΩ-cm. These films are excellent template layers for PZT and other technologically interesting perovskite oxide materials. Additionally, their conductivity allows for direct fabrication of metal- insulator-metal structures. Chemical solution deposition (CSD) and physical vapor deposition (PVD) techniques were also used to optimize orientation in PZT thin films. A comprehensive investigation of lead chemistry as well as pyrolysis and annealing conditions was performed to determine processing-structure-property relationships in PZT films. In concert, sputtering methods were also developed for comparison of thin film PZT properties from PVD and CSD routes. Combining knowledge from the previous experiments, highly (00l) oriented PZT thin films were created by exploiting epitaxial relationships between the IBAD substrate, the LaNiO3 bottom electrode, and the active PZT layer. The resulting PZT on IBAD films showed single-crystal-like ferroelectric hysteresis loops with remnant polarization values of 40 μC/cm2, which is comparable to measured values on single crystal substrates. It is expected that these films will offer enhanced piezoelectric actuation due to their high degree of orientation, relatively small amount of high-angle grain boundaries and their superior ferroelectric characteristics. Additionally, the flexibility of the substrate opens doors to many exciting materials integration possibilities for MEMS devices including energy harvesting applications and flexible sensors.
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  • description.provenance : Made available in DSpace on 2009-10-28T21:43:58Z (GMT). No. of bitstreams: 1 thesis-V8.pdf: 14150932 bytes, checksum: 92819a93c2d89e251bac0e9ac111c799 (MD5)
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