Graduate Thesis Or Dissertation

 

Surface recombination velocity and bulk lifetime in GaAs and InP Public Deposited

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  • An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation is different, however, for GaAs and InP than for Si, because of the large optical absorption coefficients and small lifetimes associated with III-V compound semiconductors. A comparison of the computer simulation of the more complex expression and the first order approximation reveals that the first order approximation model is accurate and is equally valid for both n-type and p-type materials.
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  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6670 in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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  • description.provenance : Submitted by Katy Davis (kdscannerosu@gmail.com) on 2013-06-26T22:20:44Z No. of bitstreams: 1 RastegarBahador1986.pdf: 511451 bytes, checksum: b0107b7fb5cb40505578e96755c47026 (MD5)
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-06-27T17:09:03Z (GMT) No. of bitstreams: 1 RastegarBahador1986.pdf: 511451 bytes, checksum: b0107b7fb5cb40505578e96755c47026 (MD5)
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