Graduate Thesis Or Dissertation
 

Surface recombination velocity and bulk lifetime in GaAs and InP

Public Deposited

Downloadable Content

Download PDF
https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/f1881q52q

Descriptions

Attribute NameValues
Creator
Abstract
  • An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation is different, however, for GaAs and InP than for Si, because of the large optical absorption coefficients and small lifetimes associated with III-V compound semiconductors. A comparison of the computer simulation of the more complex expression and the first order approximation reveals that the first order approximation model is accurate and is equally valid for both n-type and p-type materials.
Resource Type
Date Available
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Academic Affiliation
Non-Academic Affiliation
Subject
Rights Statement
Publisher
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6670 in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces

Relationships

Parents:

This work has no parents.

In Collection:

Items