Graduate Thesis Or Dissertation
 

Analysis and modeling of coplanar on-chip interconnects on silicon substrates

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/fb494c04v

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  • The electrical behavior of on-chip interconnects has become a dominant factor in silicon-based high speed, RF, and mixed-signal integrated circuits. In particular, the frequency-dependent loss mechanisms in heavily-doped silicon substrates can have a large influence on the transmission characteristics of on-chip interconnects. To optimize the performance of the integrated circuit, efficient interconnect models should be available in the design environment. Interconnect models in the form of closed-form expressions or ideal element equivalent circuits are often desirable for fast simulation and circuit optimization. This thesis work is concentrated on the analysis and the methodology for developing closed-form expressions for the frequency-dependent line parameters R(ω), L(ω), G(ω), and C(ω) for coplanar-type on-chip interconnects on silicon substrates. In addition, the closed-form expressions for the frequency-dependent series impedance parameters are extended to general interconnect on-chip structures on multilayer substrates. The complete solutions of the frequency-dependent line parameters are formulated in terms of corresponding static (lossless) configurations for which closed-form solutions are readily available. The closed-form expressions for the frequency-dependent series impedance parameters, R(ω) and L(ω), are obtained from a generalized complex image approach together with a surface impedance formulation including the effects of the frequency-dependent horizontal currents (eddy currents) in the multilayer lossy silicon substrates. Results for single and coupled microstrips on multilayer silicon substrates are shown over a broadband frequency range of 20 GHz and compared with full-wave electromagnetic solutions. For single and coupled coplanar on-chip interconnects, the results are compared with quasi-analytical solutions and validated with available measurement data. The frequency-dependent shunt admittance parameters, G(ω) and C(ω), are derived in terms of low- and high-frequency asymptotic solutions of the equivalent circuit model combined with the complex image method. Comparisons and validation with measurements are also presented.
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