Electo-optic characterization of ZnS:Tb ACTFEL devices for probing the hot electron distribution Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/gb19f9492

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  • In this report, the optical characteristics of ZnS:Tb AC driven thin-film electroluminescent devices are evaluated. Luminescence at low and room temperature under a constant phosphor field is recorded in order to probe the hot electron energy distribution. Samples fabricated by atomic layer epitaxy and by sputter deposition are investigated and their differences and similarities evaluated. The ALE sample exhibits a drastic increase in luminescence at low temperature, while the sputtered sample displays a decrease in luminescence at low temperature. The reduction of optical phonon scattering and nonradiative transition rates at low temperature are believed to be responsible for these changes. Differences between ALE and sputtered samples are due to the different fabrication methods. The approach suggested by Krupka in 1972 of determining the hot electron energy distribution by taking the ratio intensities of two luminescent transitions from different upper states in Tb³⁺, is shown to be inaccurate due to the possible nonradiative transitions taking place. The Tb³⁺ impact excitation quantum yield at a wavelength of 489 nm is measured and is shown to agree with Monte Carlo simulations. Saturation occurs due to the increase in band-to-band impact ionization at high phosphor fields.
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