Graduate Thesis Or Dissertation
 

Development of zinc tin oxide-based transparent thin-film transistors

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/ht24wm74x

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  • The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹ has been observed, although effective mobilities in the range of 20-50 cm²V⁻¹sec⁻¹ are more common. This performance inconsistency may be due, in part, to the large device dimensions employed in developmental test structures and/or to shadow mask misalignment. Typical drain current on-to-off ratios are > 10⁶. Variation in the post-deposition annealing cycle is found to be an effective means to control the threshold voltage and to improve device performance. Optical characterization of these devices indicates ~84% transparency in the visible spectrum as viewed through the source/drain. Another aspect of this thesis research involves the utilization and extension of quantitative polycrystalline TFT device models with the intention of guiding the design and optimization of future TFTs. In particular, subthreshold conduction is assessed in order to estimate the bulk (and/or grain boundary) and interface trap densities. This leads to a consideration of threshold voltage and channel mobility extraction, as well as establishment of the turn-on voltage, V[subscript turn-on] Finally, a third aspect of this thesis research involves a new radio-frequency (RF) magnetron sputtering system, custom-designed and constructed at OSU by Chris Tasker. Contributions to the development of this tool include assisting in the design and implementation of the computer-controlled interlocks utilized for operation of the tool. The experimental flexibility of this new tool is discussed with respect to its applicability in the design and fabrication of future TTFTS.
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