Investigation of ultra-thin In-Ga-Zn-O thin-film transistors Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/ht24wn302

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  • The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of process parameters, it is found that the turn-on voltage, V[subscript ON] (off drain current, I[superscript OFF][subscript D]) increases (decreases) with decreasing a-IGZO channel thickness (h) for h < 11 nm. The V[subscript ON] − h trend is attributed to a large density (3.5 × 10¹² cm⁻²) of backside surface acceptor-like traps and an enhanced density (3 × 10¹⁸ cm⁻³) of donor-like trap states within the upper ∼11 nm from the backside surface. The precipitous decrease observed in I[superscript OFF][subscript D] − h when h < 11 nm is ascribed to the backside surface acceptor-like traps and the closer physical proximity of the backside surface when the channel layer is ultra-thin. By altering the process parameters of gas ratio of Ar/O₂ from 9/1 to 10/0 and reducing the anneal temperature from 400 to 150°C, a h ≈ 5 nm a-IGZO TFT is demonstrated with V[subscript ON] ≈ 0 V, field-effect mobility of µFE = 9 cm⁻²V⁻¹s⁻¹, subthreshold slope of S = 90 mV/dec, and drain current on–to-off ratio of I[superscript ON/OFF][subscript D] = 2.0×10⁵.
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  • description.provenance : Submitted by Tsung Chiang (chiangts@onid.orst.edu) on 2015-04-13T16:43:56Z No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: bb87e2fb4674c76d0d2e9ed07fbb9c86 (MD5) ChiangTsungH2015.pdf: 1138822 bytes, checksum: cce6066cd99772ce326fb4a4ce6d36c2 (MD5)
  • description.provenance : Approved for entry into archive by Laura Wilson(laura.wilson@oregonstate.edu) on 2015-04-21T15:28:55Z (GMT) No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: bb87e2fb4674c76d0d2e9ed07fbb9c86 (MD5) ChiangTsungH2015.pdf: 1138822 bytes, checksum: cce6066cd99772ce326fb4a4ce6d36c2 (MD5)
  • description.provenance : Approved for entry into archive by Julie Kurtz(julie.kurtz@oregonstate.edu) on 2015-04-17T16:21:38Z (GMT) No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: bb87e2fb4674c76d0d2e9ed07fbb9c86 (MD5) ChiangTsungH2015.pdf: 1138822 bytes, checksum: cce6066cd99772ce326fb4a4ce6d36c2 (MD5)
  • description.provenance : Made available in DSpace on 2015-04-21T15:28:56Z (GMT). No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: bb87e2fb4674c76d0d2e9ed07fbb9c86 (MD5) ChiangTsungH2015.pdf: 1138822 bytes, checksum: cce6066cd99772ce326fb4a4ce6d36c2 (MD5) Previous issue date: 2015-03-12

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