Thermal growth and chemical etching of silicon dioxide film Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/k643b408k

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  • Some important factors that affect the dimensional control of oxide films on silicon were studied. Both N- and P-type silicon with resistivities in the range of 0.014 to 200 ohm-cm and a (111) surface orientation were employed in this experiment. The etching rates of silicon dioxide in hydrofluoric acid (111) were studied as a function of the concentration of HF, temperature, and stirring speed. The experimental results show that the etching rates varied directly with these variables, but no difference in etching rate was found due to concentration or type of impurity in the silicon substrate over the range studied. The oxide layers on silicon used in this experiment were prepared by five different oxidation methods. They are: wet oxygen, dry oxygen, steam, wet nitrogen during diffusion of boron, and dry oxygen during diffusion of phosphorus. The etching rates of the oxide layer grown by the above methods have the same average value except for the oxide layer grown in dry oxygen during a phosphorus diffusion which has a much faster etching rate. The thickness of the oxide layers employed in this experiment was determined by a multiple-beam interference method. Comparisons of this method to other optical interference methods were made. It was found that the multiple-beam method was the most accurate of the four interference techniques.
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