Calculation of axial mode separation of a semiconductor laser from reflectance spectrum Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/m613n134v

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  • It is reported that the axial mode separation of a semiconductor laser can be computed from the reflectance spectrum of a narrow spectral range near the lasing frequency. The Kramers-Kronig dispersion relation is used in this computation. GaAs semiconductor laser is taken as an example. The computed values of the normalized frequency separation for GaAs at lasing photon energy of 1.38 eV range from 0.107 to 0.111 for various widths of the reflectance spectrum. These results are in good agreement with the measured ones.
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  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-01-31T21:27:04Z (GMT) No. of bitstreams: 1 ThinhNguyenH1972.pdf: 413396 bytes, checksum: e68e888c197faf6a5579e5583872e1ee (MD5)
  • description.provenance : Made available in DSpace on 2014-01-31T21:27:04Z (GMT). No. of bitstreams: 1 ThinhNguyenH1972.pdf: 413396 bytes, checksum: e68e888c197faf6a5579e5583872e1ee (MD5) Previous issue date: 1972-04-13
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-01-28T14:42:21Z (GMT) No. of bitstreams: 1 ThinhNguyenH1972.pdf: 413396 bytes, checksum: e68e888c197faf6a5579e5583872e1ee (MD5)
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