Graduate Thesis Or Dissertation
 

Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/mg74qp777

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  • The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation program called VREFSIM. An arbitrary reference voltage is obtained by a simple selection of different component values. In this project, 2.56 volt and 1.28 volt references were designed and simulated. The simulated temperature coefficients of these two voltage references over a temperature range of -55 to 125 degrees Celsius were 7 and 26 parts-per-million (PPM)/Kelvin, respectively.
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