Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/mg74qp777

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  • The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation program called VREFSIM. An arbitrary reference voltage is obtained by a simple selection of different component values. In this project, 2.56 volt and 1.28 volt references were designed and simulated. The simulated temperature coefficients of these two voltage references over a temperature range of -55 to 125 degrees Celsius were 7 and 26 parts-per-million (PPM)/Kelvin, respectively.
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  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6670 in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-06-28T16:25:51Z (GMT) No. of bitstreams: 1 OrPeeKeong1988.pdf: 906951 bytes, checksum: 1c1b5d51a2088ffc6be45be51624bca4 (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-06-10T17:46:37Z (GMT) No. of bitstreams: 1 OrPeeKeong1988.pdf: 906951 bytes, checksum: 1c1b5d51a2088ffc6be45be51624bca4 (MD5)
  • description.provenance : Submitted by Katy Davis (kdscannerosu@gmail.com) on 2013-06-07T19:50:15Z No. of bitstreams: 1 OrPeeKeong1988.pdf: 906951 bytes, checksum: 1c1b5d51a2088ffc6be45be51624bca4 (MD5)
  • description.provenance : Made available in DSpace on 2013-06-28T16:25:51Z (GMT). No. of bitstreams: 1 OrPeeKeong1988.pdf: 906951 bytes, checksum: 1c1b5d51a2088ffc6be45be51624bca4 (MD5) Previous issue date: 1987-12-10

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