Modeling phosphor space charge in alternating-current thin-film electroluminescent devices Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/mg74qq412

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  • The accomplishments presented in this thesis are the development of three models for simulation of space charge generation in the phosphor layer of alternating current thin-film electroluminescent (ACTFEL) devices and the results from simulation of these models. First, a single sheet charge model is developed and simulated. The single sheet charge model is a model that simplifies the problem of modeling an arbitrary distribution of space charge across the phosphor layer by lumping all of the space charge into a sheet of charge at a specified location in the phosphor layer. In this model and all subsequent models, space charge creation is assumed to occur by field emission from bulk traps or by impact ionization of deep-level traps. A fairly exhaustive parametric variation study of the single sheet charge model is performed and the results are presented and discussed. The results show space charge effects that are quite dependent on several parameters such as the number of bulk traps in the phosphor layer, the location of the sheet of charge, the capture efficiency for space charge annihilation, and the characteristic field for impact ionization of the deep-level traps. The second model considered is a logical extension of the single sheet charge model, the two sheet charge model, which models the space charge distribution as two sheets of charge rather than one. This model has potential application in the simulation of ACTFEL devices which exhibit large and/or symmetrical space charge effects. The final model developed is an equivalent circuit/SPICE model of the single sheet charge model. Actually, two models are developed, one for space charge creation by field emission and one for impact ionization of deep-levels. Two SPICE models are required because of functional differences in the dependencies of space charge creation. The results of a simulation showing overshoot generated by SPICE are given for the field emission equivalent circuit.
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