A comparison of substrate noise coupling in heavily doped and lightly doped substrates for mixed-signal circuits Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/mk61rj999

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  • An analysis of substrate noise coupling in mixed-signal circuits has been performed in the TSMC 0.25 [mu]m lightly doped and heavily doped CMOS processes. Methods to minimize noise coupling in both the chip design and board design phases are presented along with techniques for accurate circuit simulation of noise coupling. Measurements from test chips validate simulations performed using Silencer!. Suggestions for reducing substrate noise coupling are also provided. Measurements and simulations show a 15 dB improvement in substrate noise coupling in the lightly doped substrate when compared with the heavily doped substrate with the backplane floating. When no mutual inductance is present and the backplane is grounded through a low impedance, a 17.5 dB improvement in substrate noise coupling is observed in the heavily doped process. Simulations with guard rings show an 8 dB improvement in substrate noise coupling in the heavily doped case and 3.4 dB improvement in the lightly doped case.
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