Graduate Thesis Or Dissertation

 

Modeling and characterization of hemt devices Public Deposited

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/mk61rk13x

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  • Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of the source-drain conductance characteristics. Using the saturated velocity as a fit parameter to the current voltage characteristics, good agreement with the expected value of this quantity is found in the two different systems.
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  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-05-06T17:14:39Z (GMT) No. of bitstreams: 1 ChangChujyh1990.pdf: 736941 bytes, checksum: 4552733f9e6df30e2d873d58bea34737 (MD5)

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