Graduate Thesis Or Dissertation
 

Modeling and characterization of hemt devices

公开 Deposited

可下载的内容

下载PDF文件
https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/mk61rk13x

Descriptions

Attribute NameValues
Creator
Abstract
  • Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of the source-drain conductance characteristics. Using the saturated velocity as a fit parameter to the current voltage characteristics, good agreement with the expected value of this quantity is found in the two different systems.
Resource Type
Date Available
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Committee Member
Academic Affiliation
Non-Academic Affiliation
Subject
权利声明
Publisher
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
Replaces

关联

Parents:

This work has no parents.

属于 Collection:

单件