An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/n009w458m

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  • Imperfections in semiconductor materials constitute a rich area for research. The importance of the characterization of these imperfections cannot be understated. Junction spectroscopic techniques provide a unique tool for the study of these imperfections. The test specimens could consist of Schottky barrier, p-n junctions, or MOS structures. Using Schottky barrier diode structures on silicon, and stimulating the bulk stacking faults with incident photon energies, leads to a characterization technique of the defects. This technique is termed as the Photocapacitance Transient Spectroscopy, and is described in detail. The measurements show a dominant energy level at E[subscript c]-E[subscript t] = 0.45 + 0.05 eV. due to oxygen induced stacking faults. The results obtained have been compared to those obtained by a different technique (termed the "Deep Level Transient Spectroscopy"). These results are shown to exhibit a high degree of correlation.
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