The synthesis, optical, and transport properties of SnZrS₃ Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/n296x3498

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  • Semiconducting materials which can be ambipolarly doped are highly desirable in many electronics applications, including use as solar cell materials. SnZrS₃ is being investigated for the possibility of ambipolar doping, with potential applications as a solar cell absorber layer. This dissertation covers the synthesis of SnZrS₃ and the related compound Sn₂S₃, as well as measurements of the optical bandgap, Seebeck coeffcient, and resistivity of pressed powder pellets for these materials. A reproducible synthesis method by solid state reaction of the elements is developed for SnZrS3. Bandgaps of 1.16-1.21 eV and 1.14-1.15 eV are found for SnZrS3 and Sn2S3 respectively. SnZrS₃ and Sn₂S₃ are found to be natively p-type, with Seebeck coeffcients of +600-700 μV/K and +1000 μV/K. Pressed pellet resistivities of 13 MΩcm for SnZrS₃ and 216 kΩcm for Sn₂S3 are measured. Preliminary doping studies are also carried out.
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