Vacuum-deposited aluminum-oxide MOS transistors Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/p8418r10z

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  • MOS transistors
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  • The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices. Both MOS capacitors and transistors were fabricated on one ohm-cm n-type (111) silicon wafers. Automatic display and plotting equipment were used to measure the capacitance-voltage (C-V) characteristics. Bias-temperature tests were performed on the MOS capacitors. The characteristics of the MOS transistors were measured and the drain current-voltage (I-V) characteristics, threshold voltages, transconductances, effective hole mobilities, and drain diode breakdown voltages of the MOS transistors were obtained. Both MOS capacitors and transistors with double-layer films as gate insulation revealed the best characteristics. The MOS devices with single-layer aluminum oxide as a gate dielectric exhibited unstable characteristics.
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  • description.provenance : Made available in DSpace on 2014-02-13T18:14:49Z (GMT). No. of bitstreams: 1 HwangYunS1971.pdf: 677205 bytes, checksum: e5a5a513d67e212d87bcc9f4904acfd0 (MD5) Previous issue date: 1970-12-16
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