Graduate Thesis Or Dissertation
 

p-type transparent electronics

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/pg15bh165

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  • The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity, and carrier concentration of ®-BaCu2S2 are 3.5 cm2/V-s, 17 S/cm, and 1019 cm−3, respectively. The potential use of BaCu2S2 in thin-film solar cells is described. A number of p-channel transparent thin-film transistors (p-TTFTs) based on BaCu2S2, NiO, NiO:Li, and CuScO2 are fabricated and characterized. None of these p-TTFTs are operational. The key issues in these transistors are as follows. BaCu2S2 p-TTFTs exhibit excessively large gate leakage current caused by the interaction of BaCu2S2 with the gate insulator. In undoped NiO p-TTFTs and in CuScO2 p-TTFTs, the injected carriers are trapped in the transistor channel layer thin film. CuScO2 p-TTFTs also suffer from gate leakage due to interaction of CuScO2 with the gate insulator. In this work it is found that having Cu containing materials in contact with gate insulators leads to enhanced gate leakage current. In NiO:Li p-TTFTs, the bulk channel layer is too conductive to modulate with the transistor gate; thus, the transistors do not work. Information obtained from the characterization of these p-TTFTs is used to identify and explore important considerations in making a functional p-TTFT. These considerations include efficient injecting contacts to wide-bandgap p-type insulators, and the conductivity of materials used for the transistor channel in p-TTFTs. The topic of injecting contacts to wide-bandgap insulators and the topic of channel layer conductivity are explored and quantified.
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