A study of the photoresponse of semi-insulating gallium arsenide Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/pr76f609q

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  • The photoresponse behavior of semi-insulating GaAs is investigated. The photocarrier lifetime is discussed and the influence of surface and contact recombination is taken into account. Photocurrent-voltage characteristics have been measured and a mechanism for the gain in terms of space charge amplification and avalanching is suggested. The influence of deep level traps on the photoresponse of semi-insulating GaAs is investigated. Furthermore, the photocurrent-temperature dependence is studied and a strong increase of photocurrent below 160 K is reported.
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  • File scanned at 300 ppi (Monochrome) using Capture Perfect 3.0.82 on a Canon DR-9080C in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-07-15T16:00:19Z (GMT) No. of bitstreams: 1 SchummGerhard1985.pdf: 361065 bytes, checksum: df9ebf72cafb4784d9d0d7bad628b067 (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-07-08T17:38:42Z (GMT) No. of bitstreams: 1 SchummGerhard1985.pdf: 361065 bytes, checksum: df9ebf72cafb4784d9d0d7bad628b067 (MD5)
  • description.provenance : Made available in DSpace on 2013-07-15T16:00:19Z (GMT). No. of bitstreams: 1 SchummGerhard1985.pdf: 361065 bytes, checksum: df9ebf72cafb4784d9d0d7bad628b067 (MD5) Previous issue date: 1985-03-18
  • description.provenance : Submitted by Kevin Martin (martikev@onid.orst.edu) on 2013-07-03T21:36:44Z No. of bitstreams: 1 SchummGerhard1985.pdf: 361065 bytes, checksum: df9ebf72cafb4784d9d0d7bad628b067 (MD5)

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