High speed analog circuit design using the heterostructure insulated gate field effect transistor Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/r207tr600

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  • As Si MOS approaches its maximum limits in speed and bandwidth, new devices are desired to meet the needs of high speed communications and signal processing. A device that exhibits superior performance to Si MOS, BJT, and GaAs technology is the HEMT (high electron mobility transistor). The HEMT offers superior transconductance, mobility, speed, and noise performance compared to Si MOS, BJT, and standard GaAs technology. The high performance is a result of improved channel mobility due to a heterojunction. At the heterointerface, the majority carriers are confined to a very thin sheet forming what has been termed a 2DEG (two dimensional electron gas). The purpose of this thesis is to demonstrate the suitability of Honeywell's delta-doped self-aligned complimentary HIGFET process for the realization of high speed analog circuits. An operational amplifier and switched-capacitor circuit are presented. The operational amplifier has been fabricated at Honeywell and preliminary tests have been performed on the op-amp which are also presented.
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  • File scanned at 300 ppi (Monochrome, 256 Grayscale) using Capture Perfect 3.0 on a Canon DR-9050C in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2012-09-21T19:47:16Z (GMT) No. of bitstreams: 1 SmithAlexanderB1998.pdf: 3184263 bytes, checksum: a104b220a4f1bf66e5be38b3df317201 (MD5)
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