Thermally-stable amorphous metal thin films Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/rj430737s

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  • Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess of 500 °C. The following guidelines are employed in the design of a thermally-stable AMTF: (i) The amorphous metal should be composed of three or more elements with the highest concentration being a refractory metal. (ii) Constituent elements should have a wide distribution of atomic radii, with at least a 12% difference in size between any two elements. (iii) A large negative heat of mixing should exist among elemental constituents. (iv) At least one constituent element should be a metalloid, such as Si. Using these guidelines three AMTFs - TaNiSi, TaMoSi, and TaWSi- are investigated and are found to be thermally-stable to the extent that their crystallization temperature is greater than 600 °C. TaWSi is found to have the highest crystallization temperature, i.e., ∼ 1000 > 900 °C, and is used in the fabrication of a thermally-stable MIM diode which exhibits Fowler-Nordheim dominated tunneling even after being subjected to a post-deposition anneal at 525 °C.
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