ACTFEL device simulation with impact ionization using a two-sheet charge model Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/rr172144z

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  • The main achievement of this thesis is the development of a two-sheet charge simulation model with space charge creation by trap-to-band impact ionization to describe the electrical characteristics of alternating-current thin-film electroluminescent (ACTFEL) devices. The two-sheet charge model localizes all of the space charge in the phosphor region of an ACTFEL device at two sheets of positive charge. The locations of these two sheets represent charge centroids within the phosphor region of the ACTFEL device. Simulation results demonstrate that space charge creation by trap-to-band impact ionization yields more capacitance-voltage (C-V) and internal charge-phosphor field (Q-F[subscript p]) overshoot than when space charge is created by field emission from bulk traps within the phosphor region of an ACTFEL device. The increased C-V and Q-F[subscript p] overshoot observed in simulation when trap-to-band impact ionization is employed as the mechanism for space charge creation corresponds to trends observed experimentally in SrS ACTFEL devices. Several of the model parameters are varied to determine the sensitivity of the simulation to these parameters. The parameters with the greatest influence on simulation performance include the trap density in the phosphor region, the value of the series resistance used in the experimental test circuit, and the characteristic fields for trap-to-band impact ionization, band-to-band impact ionization, and electron capture.
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2012-08-29T20:24:55Z (GMT) No. of bitstreams: 1 BouchardAnthonyF2000.pdf: 3419668 bytes, checksum: 6ad031395046709ea2bf511f5b39ab23 (MD5)
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