Graduate Thesis Or Dissertation

 

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS 公开 Deposited

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/s4655j69g

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  • This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization of these samples using van der Pauw Hall and photoluminescence measurements showed clear trends in carrier mobility and quantum well quality with respect to the structure of the InGaAs region. From this an optimal indium mole fraction and quantum well width were obtained. Subsequent to material characterization, MODFET devices were fabricated and characterized. The measured DC device performance was reasonable and suggests that high quality p-type MODFETS should be obtainable with a properly optimized device structure and fabrication process.
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  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6670 in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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