Reliability and hot-electron effects in analog and mixed-mode circuits Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/sx61dq765

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  • Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and circuit level, and finally shows a new composite n-MOSFET device which significantly suppresses substrate current - an indication of hot-electron degradation. By using the composite device in the output gain stage of a CMOS differential amplifier with 1p.m technology, the normalized substrate current of the n-channel device is reduced by eight orders of magnitude for a sloping input waveform. The reduction in device substrate current is achieved at the cost of increased area and reduced frequency response. Replacing conventional n-channel devices with composite n-MOSFETs provides a simple way to improve device and circuit reliability without modification of the device structure and/or fabrication process.
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  • description.provenance : Submitted by Kirsten Clark (kcscannerosu@gmail.com) on 2013-01-03T21:24:16Z No. of bitstreams: 1 GeDavidYing1993.pdf: 3050842 bytes, checksum: 098a7f861c457c92d38c1c7ae56bcc22 (MD5)
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  • description.provenance : Submitted by Kirsten Clark (kcscannerosu@gmail.com) on 2013-01-22T16:50:44Z No. of bitstreams: 1 GeDavidYing1993.pdf: 3055595 bytes, checksum: 829e498d3b83d680336a0c3958862f8b (MD5)

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