An efficient modeling approach for substrate noise coupling analysis with multiple contacts in heavily doped CMOS processes Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/t722hc892

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  • A computationally efficient and accurate substrate noise coupling model for multiple contacts in heavily doped CMOS processes is presented and validated with simulations and experimental data. The model is based on Z parameters that are scalable with contact separation and size. This results in fast extraction of substrate resistances for large circuit examples. The Z-parameter model can be readily extracted from three dimensional simulations or measured data. Extensions of the model to lightly doped substrates are also presented. Several examples demonstrate that this approach can be orders of magnitude faster than currently available techniques for substrate resistance extraction. The computed substrate resistances are in close agreement with the numerical simulations, with a maximum error less than 10%.
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