The effect of etches on surface recombination in silicon Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/tb09j839c

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  • This thesis presents a limited investigation of the effects of various etches on the surface properties of silicon. Surface recombination velocities of silicon under different etching treatments are compared by using the photoelectromagnetic effect. A measure of the minority carriers lifetime by the photoconductive decay method provides another means of comparing various surface treatments and ambient atmospheres. CP-4 etch yields the smallest surface recombination velocity in silicon; while sodium dichromate solution has the pronounced effect of reducing the minority carrier lifetimes in silicon. Ambient atmospheres have no obvious influence on the surface recombination velocity of silicon.
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  • File scanned at 300 ppi using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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  • description.provenance : Submitted by Lauren Kaysen (lkscannerosu@gmail.com) on 2014-06-05T23:04:53Z No. of bitstreams: 1 ChengDanS1963.pdf: 7261903 bytes, checksum: 698fc70a83559cbf63558b4b6a614cc7 (MD5)
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-06-16T20:40:46Z (GMT) No. of bitstreams: 1 ChengDanS1963.pdf: 7261903 bytes, checksum: 698fc70a83559cbf63558b4b6a614cc7 (MD5)

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