The effect of etches on surface recombination in silicon

Graduate Thesis Or Dissertation

Public Deposited

Citeable URL: https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/tb09j839c

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Attribute Name	Values
Creator	Cheng, Dan Sang
Abstract	This thesis presents a limited investigation of the effects of various etches on the surface properties of silicon. Surface recombination velocities of silicon under different etching treatments are compared by using the photoelectromagnetic effect. A measure of the minority carriers lifetime by the photoconductive decay method provides another means of comparing various surface treatments and ambient atmospheres. CP-4 etch yields the smallest surface recombination velocity in silicon; while sodium dichromate solution has the pronounced effect of reducing the minority carrier lifetimes in silicon. Ambient atmospheres have no obvious influence on the surface recombination velocity of silicon.
Resource Type	Masters Thesis
Date Available	2014-06-16T20:40:46+00:00
Date Issued	1962-11-15
Degree Level	Master's
Degree Name	Master of Science (M.S.)
Degree Field	Electrical Engineering
Degree Grantor	Oregon State University
Commencement Year	1963
Advisor	Looney, James C.
Academic Affiliation	Electrical Engineering
Non-Academic Affiliation	Oregon State University. Graduate School
Subject	Silicon Surface chemistry Semiconductors
Rights Statement	Copyright Not Evaluated
Publisher	Oregon State University
Peer Reviewed	No
Language	English [eng]
Digitization Specifications	File scanned at 300 ppi using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces	http://hdl.handle.net/1957/49071

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