Electrochemical etch characteristics of (100) silicon in tetramethyl ammonium hydroxide Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/tb09j8960

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  • A study of potentiostatic and galvanostatic electrochemical etching of silicon in tetramethylammonium hydroxide (TMAH) has been carried out. In TMAH baths,, we find that biased (100) silicon etch rates increase 21% over OCP etch rates. For TMAH baths seasoned with silicon, biased silicon etch rates increase to 63% over those at OCP. Electrochemical etching eliminates the growth of hillocks on etching surfaces regardless of etchant pH, [TMAH] or silicon loading, resulting in highly smooth etching surfaces. Potentiostatic and galvanic etching yield similar etch rates and surface consistency.
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