Electrochemical etch characteristics of (100) silicon in tetramethyl ammonium hydroxide

Graduate Thesis Or Dissertation

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Citeable URL: https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/tb09j8960

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Attribute Name	Values
Creator	Watts, Paul E.
Abstract	A study of potentiostatic and galvanostatic electrochemical etching of silicon in tetramethylammonium hydroxide (TMAH) has been carried out. In TMAH baths,, we find that biased (100) silicon etch rates increase 21% over OCP etch rates. For TMAH baths seasoned with silicon, biased silicon etch rates increase to 63% over those at OCP. Electrochemical etching eliminates the growth of hillocks on etching surfaces regardless of etchant pH, [TMAH] or silicon loading, resulting in highly smooth etching surfaces. Potentiostatic and galvanic etching yield similar etch rates and surface consistency.
License	All rights reserved
Resource Type	Masters Thesis
Date Available	2012-07-11T16:16:08+00:00
Date Issued	2002-11-12
Degree Level	Master's
Degree Name	Master of Science (M.S.)
Degree Field	Materials Science
Degree Grantor	Oregon State University
Commencement Year	2003
Advisor	Kassner, Michael E.
Non-Academic Affiliation	Oregon State University. Graduate School
Subject	Semiconductor wafers -- Etching Silicon -- Surfaces -- Etching
Rights Statement	In Copyright
Publisher	Oregon State University
Peer Reviewed	No
Language	English [eng]
Digitization Specifications	File scanned at 300 ppi (Monochrome, 8-bit Grayscale, 24-bit Color) using ScandAll PRO 1.8.1 on a Fi-6670 in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces	http://hdl.handle.net/1957/30888

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